Recent Publications (since 2005)

Editor  

1.                  Y. Kuo, Associate Editor, J. Electrochemical Society, 2003-2012.

2.                  Y. Kuo, 2nd Eng. Conf. Intl. ULSIC vs. TFT Conference, ECS Transactions, 22(1) Electrochem. Soc., Pennington, 2009. 

3.                  P. Mascher, P. Joshi, M. E. Overberg, and Y. Kuo, ECS Transactions Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices, 19(8), Electrochem. Soc., Pennington, 2009.

4.                  Y. Kuo, ECS Transactions Thin Film Transistor Technologies 9, 16(9), Electrochem. Soc., Pennington, 2008. 

5.                  Y. Kuo, D. Ast, and M. Shur, Eng. Conf. Intl. ULSIC vs. TFT Conference, ECS Transactions, 8(1), Electrochem. Soc., Pennington, 2006. 

Books   

1.                  Y. Kuo, Editor of textbook, “Polycrystalline Silicon Thin Film Transistors,” Kluwer Academic Publishers, Norwell, MA, 2003.

2.                  Y. Kuo, Editor of textbook, “Amorphous Silicon Thin Film Transistors,” Kluwer Academic Publishers, Norwell, MA, 2003.   

Papers

1.                  C. Lin and Y. Kuo, invited, “Single and Dual ITO and ZnO Embedded ZrHfO High-k Nonvolatile Memories,” ECS Trans. Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices, 19 (8) 81-87 (2009).

2.                  C.-H. Yang, Y. Kuo, C.-H. Lin, and W. Kuo, “Temperature Influence on Nanocrystals Embedded High-k Nonvolatile Memories,” ECS Trans. Adv. Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment, 19 (1) 41-47 (2009).

3.                  C.-H. Yang, Y. Kuo, C.-H. Lin, and W. Kuo, “Reliability of nc-ZnO Embedded ZrHfO High-k Nonvolatile Memory Devices Stressed at High Temperatures,” MRS Proc. Materials and Physics for Nonvolatile Memories, 1160-H02-01 (2009).   

4.                  Y. Kuo, invited, “Plasma-Based Copper Etch Process for TFT and IC Fabrications - History and Status,” Proc. 16th Intl. Workshop on Active-Matrix Flat Panel Displays and Devices, 211-214 (2009). 

5.                  Y. Kuo and M. Coan, “Mechanical Bending Effects on Charge and Discharge Characteristics of a-Si:H TFT Nonvolatile Memories,” Proc. 16th Intl. Workshop on Active-Matrix Flatpanel Displays and Devices, 259-262 (2009).

6.                  G. Liu and Y. Kuo, “Electromigration of Copper Lines Patterned with a Plasma-based Etch Process,” J. Electrochem. Soc., 156(6) H579-H584 (2009).

7.                  Y. Kuo and H. Nominanda, “Charge and Discharge of Floating-Gate a-Si:H TFT Nonvolatile Memories,” J. Korean Phys. Soc., 54(1), 409-414 (2009).

8.                  Y. Kuo, invited, “A-Si:H TFT Nonvolatile Memories and Copper Interconnect
for Rigid and Flexible Electronics,” ECS Trans. Semiconductor Technol. ULSI vs. TFT, 22(1) 183-190 (2009).  

9.                  Y. Kuo, invited, “PECVD for Flexible Displays – Advantages and Limitations,” Abstract, ECS Symp. Novel Plasma Techniques for Low Temperature Processing of Thin Films for Flexible Electronics, # 0772 (2009). 

10.              C.-H. Lin and Y. Kuo, “Mechanisms of Charge Storage in Nanocrystal Ruthenium Oxide Embedded ZrHfO High-k Film,” Electrochem. Soc. Trans. Physics and Technology of High-k Gate Dielectrics 6, 16(5), 309-316 (2008).

11.              C.-H. Yang, Y. Kuo, R. Wan, C.-H. Lin, and W. Kuo, invited, “Failure Analysis of Nanocrystals Embedded High-k Dielectrics for Nonvolatile Memories,” IEEE Intl. International Reliability Physics Symp. Proc., 46-49 (2008). 

12.              C.-H. Yang, Y. Kuo, C.-H. Lin, R. Wan, C.-H. Lin, and W. Kuo, “Relaxation Behavior and Breakdown Mechanisms of Nanocrystals Embedded Zr-doped HfO2 High-k Thin Films for Nonvolatile Memories,” MRS Procs. Materials Science and Technology for Nonvolatile Memories, 1071-F02-09 (2008).

13.              J. Lu, C.-H. Lin, and Y. Kuo, “Nanocrystalline Zinc Oxide Embedded Zirconium-doped Hafnium Oxide for Nonvolatile Memories,” J. Electrochem. Soc., 155(6) H386-H389 (2008). This paper was selected by AIP Virtual J. Nanoscale Sci. and Technol. 17(17) 2008.

14.              G. Liu, Y. Kuo, S. Ahmed, D. N. Buckley, and T. Tanaka-Ahmed, “Grain Size Effect on Plasma-based Copper Etch Process,” J. Electrochem. Soc., 155(6) H432-H437 (2008).

15.              G. Liu and Y. Kuo, “Additive Gas Effect on the Cl2 Plasma-based Copper Etch Process and Sidewall Attack,” J. Electrochem. Soc., 155(2) H97-H102 (2008). 

16.              H. H. Lee and Y. Kuo, “Surface Modificaiotn of a Gel-Free Microchannel Electrophoresis Device for DNA Identification, Jpn. J. Appl. Phys., 47(4) 2300–2305 (2008).

17.              Y. Kuo, M. Coan, and G. Liu, “Reliability of a-Si:H TFTs and Copper Interconnect Lines for Flexible Electronics,”  Electrochem. Soc. Trans. TFT 9, 16(9), 345-351 (2008).

18.              R. Wan, J. Yan, Y. Kuo, and J. Lu, “Dielectric Breakdown and Charge Trapping of Ultrathin ZrHfO/SiON High-k Gate Stacks,” Jpn. J. Appl. Phys., 47(3), 1639-1641 (2008).

19.              S. Chatterjee, Y. Kuo, and J. Lu, “Thermal Annealing Effect on Electrical Properties of Metal Nitride Gate Electrodes with Hafnium Oxide Gate Dielectrics in Nano-metric MOS Devices,” Microelectronic Engineering, 85(1), 202-209 (2008).

20.              Y. Kuo and H. Nominanda, invited, “Charge and Discharge of Floating Gate a-Si:H TFT Nonvolatile Memories,” Proc. 4th Intl. Thin-Film Transistor Conf., 269-272 (2008).

21.              Y. Kuo, “TFT and ULSIC – Competition or Collaboration,” Jpn. J. Appl. Phys., 47(3), 1845-1852 (2007).  This paper was selected the Top 20 most downloaded papers in the journal for 3 months continuously. http://www.ipap.jp/jjap/index.htm.    

22.              G. Liu and Y. Kuo, “Reactive Ion Etching of Titanium Tungsten Thin Films,” J. Electrochem. Soc., 154(7), H653-H658 (2007). 

23.              A. Birge and Y. Kuo, “Nonvolatile MOS Memory Capacitors with Nanocrystalline Indium Tin Oxide Embedded Zirconium-Doped Hafnium Oxide High-k Dielectric,” J. Electrochem. Soc., 154(10), H887-H893 (2007). 

24.              H. Nominanda and Y. Kuo, “Memory functions of amorphous silicon based floating gate MIS capacitors,” Electrochem. Solid-State Letts., 10(8), H232-H235 (2007).

25.              Y. Kuo and H. Nominanda, “Amorphous Silicon Based TFT and MIS Nonvolatile Memories,” MRS Symp. Proc. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology, 989, A10-03, in press (2007). 

26.              Y. Kuo, invited, “ULSIC vs. TFT – What can they learn from each other?” ECS Trans.  Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, 8(1), 45-50 (2007).

27.              J. Yan, Y. Kuo, and J. Lu, “Zirconium doped Hafnium Oxide High-k Gate Dielectrics with sub-nanometer Equivalent Oxide Thickness by Reactive Sputtering,” Electrochem. Solid-State Letts., 10(7), H199-H202 (2007).

28.              S. Ahmed, D.N. Buckley, S. Nakahara, T. T. Ahmed, and Y. Kuo, “An Isothermal Annealing Study of Spontaneous Morphology Change in Electrodeposited Copper Metallization,” J. Electrochem. Soc., 154(3) D103-D112 (2007). 

29.              C.-H. Lin, Y. Kuo, and J. Lu, “Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film,” Electrochem. Soc. Transactions Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment, 6(1), 121-127 (2007).

30.              Y. Kuo, Electronics Award presentation, “Thin Film Transistor and ULSIC Technologies - Parallel or Crossing?”  Electrochem. Soc. Transactions Silicon-on-Insulator Technology and Devices 13, 6(4), 121-132 (2007). 

31.              H. Nominanda, Y. Kuo, C.-C. Chen, and C.-C. Hwang, “Radiation Exposure Effect on Amorphous Silicon Thin Film Transistors, ECS Trans. Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, 8(1), 261-266 (2007). Selected for the 3rd award poster paper. 

32.              Y. Kuo, plenary speech, “TFT and ULSIC – Competition or Collaboration, AM-FPD 07 Digest of Technical Papers, 1-4 (2007). 

33.              Y. Kuo, invited, “TFTs Beyond LCD Pixel Driving and Experience for 450 mm ULSIC Process Development,” Intl. Display Manufacturing Conf. Proceedings, 209-212 (2007).

34.              A. Birge and Y. Kuo, “Nonvolatile MOS Memory Capacitors with Nanocrystalline Indium Tin Oxide Embedded Zirconium-Doped Hafnium Oxide High-k Dielectric,” J. Electrochem. Soc., 154(10), H887-H893 (2007). 

35.              H. Nominanda and Y. Kuo, “Memory functions of amorphous silicon based floating gate MIS capacitors,” Electrochem. Solid-State Letts., 10(8), H232-H235 (2007).

36.              W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, “Breakdown Phenomena of Zirconium-Doped Hafnium Oxide High-k Stack with an Inserted Interface Layer,” Appl. Phys. Letts., 89, 072901 (2006).

37.              Y. Kuo and H. Nominanda, “Nonvolatile hydrogenated-amorphous-silicon thin-film-transistor memory devices,” Appl. Phys. Letts., 89(1), 89, 173503 (2006).  

38.              J. Lu, Y. Kuo, J. Yan, and C.-H. Lin, “Nanocrystalline Silicon Embedded Zirconium-doped Hafnium Oxide High-k Memory Device,” Jpn. J. Appl. Phys., 45(34), L901-L903 (2006).

39.              Y. Kuo, invited, “Mixed Oxide High-k Gate Dielectrics - Interface Layer Structure, Breakdown Mechanism, and New Memories,” ECS Trans. 4th International Symposium on High Dielectric Constant Gate Stacks, 3(3), 253-266 (2006).

40.              W. Luo, T. Yuan, Y. Kuo, J. Lu, J. Yan, and W. Kuo, “Charge Trapping and Dielectric Relaxation in Connection with Breakdown of High-k Gate Dielectric Stacks” Appl. Phys. Letts., 88, 202904 (2006).

41.              Y. Kuo, invited, “Mixed Oxides as High-k Gate Dielectric Films,” Electrochem. Soc. Trans. Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing, Eds, D. Misra, H. Iwai, 2(1), 13-22 (2006).

42.              H. H. Lee and Y. Kuo, “Integration of an Amorphous Silicon Thin Film Transistor with a Microchannel Electrophoresis for Protein Identification,” Electrochem. Solid-State Letts., 9, J21-J23 (2006). This paper was selected by AIP to appear in Virtual Journal of Nanoscale Science & Technology, 13(15), 2006.  

43.              J. Lu and Y. Kuo, “Hafnium-Doped Tantalum Oxide High-k Dielectrics with Sub-2 nm Equivalent Oxide Thickness,” Appl. Phys. Lett., 87(23), 232906 (2005).

44.              J. Lu, Y. Kuo, and J.-Y. Tewg, “Hafnium-doped Tantalum Oxide High-k Gate Dielectrics,” J. Electrochem. Soc., 153, G410-G416 (2006).  

45.              J. Lu, Y. Kuo, S. Chatterjee, and J.-Y. Tewg, “Metal Nitride Gate Electrode Effects on Dielectric Properties of HfO2 High-k Gate Dielectrics,” JVST B, 24(1), 349-357 (2006).

46.              S. Chatterjee, J. Lu, J.-Y. Tewg, Y. Kuo, and P. Majhi, “Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress,” Microelectronics Reliability, 46/1, 69-76 (2006). This paper was elected a hottest TOP25 article in Microelectronics and Reliability Journal published in Science Direct by Elsevier Publishers http://top25.
sciencedirect.com/index.php?cat_id=7&subject_area_id=7&journal_id=00262714.         

47.              Y. Kuo, J. Lu, and H. Nominanda, “Sputter Deposition of nm-Thick Films for Passivation of Organic Pellicles,” Vacuum, 80, 698-703 (2006).

48.              Y. Kuo, H. Nominanda, and G. Liu, “n-channel and p-channel a-Si: H Thin Film Transistors with Copper Electrodes,” J. Korean Physical Soc., 48, S92-S97 (2006). 

49.              Y. Kuo, invited, “New Development of Non-LCD Applications of Thin Film Transistors,” Digest of Technical Papers AM-FPD 06, 77-79, 2006. 

50.              Y. Kuo, “Plasma-Copper Reaction Mechanism in a Novel Copper Dry Etching Process,” Procs. 6th Intl. Conf. On Reactive Plasmas and 23rd Symp. Plasma Processing, 29-30 (2006).

51.              Y. Kuo, J. Lu, S. Chatterjee, J. Yan, H. C. Kim, T. Yuan, W. Luo, H. C. Kim, J. Peterson, and M. Gardner, S. Chatterjee, W. Luo, “Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics,” ECS Trans. High Dielectric Constant Gate Stacks III, 1(5), 447-454 (2005).    

52.              G. Liu and Y. Kuo, “Control of Edge Shape, Sidewall Profile, and Sidewall Roughness of the Plasma Etched Copper,” Elecrochem. Soc.  Trans., Ed. G. Mathad, M. Engelhardt, K. Kondo, H. Rathore, 1(11), 169-176 (2006).    

53.              Y. Kuo and J. Lu, “Bulk and Interface Material and Electrical Properties of Hafnium-Doped Tantalum Oxide High-K Films,” Elecrochem. Society Transactions High Dielectric Constant Gate Stacks III, 1(5), 177-183 (2005).     

54.              M. Ristova, Y. Kuo, H. H. Lee, and J.-Y. Tewg, “Effect of Long-term He–Ne Laser Light Exposure and Subsequent Annealing on Hydrogenated Amorphous Silicon PIN Photodiodes,” Semiconductor Science and Technology, 20, 1005-1009 (2005).

55.              S. Chatterjee, Y. Kuo, J. Lu, J.-Y. Tewg, and P. Majhi, “Effects of Post Metallization Annealing on the Electrical Reliability of Ultra-thin HfO2 Films with MoN and WN Gate Electrode,” IEEE Intl. Reliability Physics Symp. Procs., 626-627 (2005).

56.              J.-Y. Tewg,Y. Kuo, and J. Lu, “Suppression of Crystallization of Tantalum Oxide Thin Film by Doping with Zirconium,” Electrochem. and Solid-State Letters, 8(1), G27-G29 (2005).

57.              J.-Y. Tewg, Y. Kuo, J. Lu, and B. W. Schueler, “Influence of a 5 Å Tantalum Nitride Interface Layer on Dielectric Properties of Zirconium-Doped Tantalum Oxide High-k Films,” J. Electrochem. Soc., 152(8), G617-G622 (2005).

58.              J.-Y. Tewg, Y. Kuo, and J. Lu, “Zirconium-Doped Tantalum Oxide Gate Dielectric Films Integrated with Molybdenum, Molybdenum Nitride, and Tungsten Nitride Gate Electrodes,” J. Electrochem. Soc., 152(8), G643-G650 (2005).

59.              S. Chatterjee, J. Lu, J.-Y. Tewg, Y. Kuo, and P. Majhi, “Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress,” Microelectronics Reliability, 46/1, 69-76 (2005).  

60.              Y. Kuo, J. Lu, and H. Nominanda, “Sputter Deposition of nm-Thick Films for Passivation of Organic Pellicles,” Proc. 8th Intl. Symp. Sputtering and Plasma Processes, ISSP 2005, 185-188 (2005).

61.              Y. Kuo, invited keynote, “Doping of High-k Dielectric Thin Films for Future Nano MOSFETs,” 2005 Proc., Proc. Symp. Nano Device Technology, 3-7 (2005). 

62.              Y. Kuo, H. Nominanda, and G. Liu, invited. “n- and p-channel a-Si:H TFTs with copper electrodes,” Proc. 1st International TFT Conference ’05, 6-9 (2005).      

 

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