Plasma Enhanced Chemical Vapor Deposition (PECVD)
PECVD is an important
deposition method for the fabrication of VLSI and TFTs.
It has two advantages compared with the conventional CVD method: low process temperature
and flexible film properties. The former satisfies the low thermal budget
requirement for most production. The latter makes it possible to tailor film
properties for specific device characteristics. However, the plasma nature of
the process could damage some films and deteriorate the device. The goal of
this research is to understand the fundamental mechanism of the process by
correlating the process parameters, film properties, and device
characteristics. The following are examples of some results obtained in this
area. For more detailed information, please see the Publications
list.
a-Si:H
Deposition
- Damage to SiNx surface
Transfer Characteristics as a Function of a-Si:H
Dep. Power
Y. Kuo, JECS, 142(7), 2486, 1995.
P+
Deposition, below 250ºC
Resistivity as a Function of
Diborane Flow Rate
H. Nominanda and
Y. Kuo, ECS Extended Abst. Intl. Plasma
Processing XIV,
2002.
p- and p+
Deposition
Deposition Rate vs.
Temperature for and B2H6 Flow Rate
H. Nominanda and Y. Kuo, ECS Proc. XIV
Plasma Processing, 2002-17, 1-9, 2002.
Film’s
Si-O/Si-Si vs. B2H6 Flow Rate
H. Nominanda and Y. Kuo, ECS Proc. XIV
Plasma Processing, 2002-17, 1-9, 2002.
n+ Deposition - Resistivity as a function
of SiH4 flow rate and the microcrystalline formation
Raman Scattering of n+ Films
Y. Kuo, APL 71(19), 2821-2823, 1997; Y. Kuo and K.
Latzko, MRS Symp. Proc. 1997
SiNx Deposition
- Critical Power Wcritical
Concept
- Unified relation for deposition process, material properties, and plasma
phase chemistry
- Low temperature deposition (100°C)
SiNx Dep. Rate as a Function
of Power and Gas Composition
Y.
Kuo, APL, 63(2), 144, 1993.
SiNx as a Function of
Plasma Power and Gas Composition
Y. Kuo, APL
63(2), 144, 1993.
FTIR of N-rich SiNx Films
Y. Kuo, et. al., ECS Proc. 10th Plasma Proc.,
94-20, 513,
1994.
Temperature vs. Chemical
Bonds
Y.
Kuo, ISSP 2001.
Low Temperature Deposition
Y.
Kuo and H. H. Lee, Vacuum, 66, 299-303, 2002.
Etch Rate vs. RI and Deposition Temperature
Y.
Kuo and H. H. Lee, Vacuum, 66, 299-303, 2002.
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- Resistivity as a function
of SiH4 flow rate and the microcrystalline formation
|
|
Raman Scattering of n+ Films
|
Y. Kuo, APL 71(19), 2821-2823, 1997; Y. Kuo and K.
Latzko, MRS Symp. Proc. 1997
SiNx Deposition
- Critical Power Wcritical
Concept
- Unified relation for deposition process, material properties, and plasma
phase chemistry
- Low temperature deposition (100°C)
SiNx Dep. Rate as a Function
of Power and Gas Composition
Y.
Kuo, APL, 63(2), 144, 1993.
|
SiNx as a Function of
Plasma Power and Gas Composition Y. Kuo, APL
63(2), 144, 1993. |
FTIR of N-rich SiNx Films Y. Kuo, et. al., ECS Proc. 10th Plasma Proc., 94-20, 513,
1994. |
Temperature vs. Chemical
Bonds
Y.
Kuo, ISSP 2001.
Low Temperature Deposition
Y.
Kuo and H. H. Lee, Vacuum, 66, 299-303, 2002.
Etch Rate vs. RI and Deposition Temperature
Y.
Kuo and H. H. Lee, Vacuum, 66, 299-303, 2002.
Home, TFTs, High
k Gate Dielectrics, Low k dielectrics, RIE, Biochips, Laboratory,
Publications, Activities, Presentations, Links