MOS Memories
The capacitor is an
important, basic device used to investigate electric properties of a new
dielectric material or structure under various process conditions. We build MOS
(or MIS) capacitors to screen new doped high-k materials
for future MOSFETs. We also use the MOS structure to investigate nonvolatile
memory functions of the nanocrystals embedded high-k gate dielectrics. We
further borrow the MOS structure to research on a novel-type of low-temperature
a-Si:H-based nonvolatile memories.
Doped high-k dielectric MOS
capacitors
The doped
high-k film’s bulk and interface material, e.g., composition, concentration
profile, thickness, bond states, and crystallinity, and electrical properties,
e.g., interface density of state Dit, oxide trap density Qot,
fixed charge density Qf, and flat band voltage Vfb, with
respect to dopant type, concentration, PDA condition, and interface layer
composition, have been investigated and reported, see Recent
Publication list for details.
Doped high-k dielectric
embedded with nanocrystals for MOS memories
·
nc-Si embedded ZrHfO2 memory capacitors
J. Lu, Y. Kuo, J. Yan and C.-H. Lin, JJAP 45(34), L 901 (2006).
·
nc-ITO embedded ZrHfO2 hole-based memory capacitors
Y.
Kuo, ECS Trans. 3(3), 253 (2006).
Y. Kuo, J. Lu, J. Yan, and C.-H. Lin, IEEE
Nano, 2006.
A. Birge, C.-H. Lin, and Y. Kuo, ECS Trans. 3(3), 193 (2006).
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